Copper metalized ohmic contact electrode of compound device

Title:	Copper metalized ohmic contact electrode of compound device
Authors:	Lee, Cheng-Shih Chang, Edward Yi Chen, Ke-Shian
Issue Date:	12-Jul-2007
Abstract:	The present invention provides an ohmic contact for a copper metallization whose heat diffusion is improved and cost is reduced. Therein, the ohmic contact is formed through a depositing and an annealing of three metal layers of Pd, Ge and Cu; and, the contact resistance of the ohmic contact is adjusted by the thicknesses of the three layers.
Gov't Doc #:	H01L023/48
URI:	http://hdl.handle.net/11536/105645
Patent Country:	USA
Patent Number:	20070158844
Appears in Collections:	Patents

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APA	Lee, C., Chang, E. Yi, & Chen, K. (2007). Copper metalized ohmic contact electrode of compound device. http://hdl.handle.net/11536/105645.
Bibtex	@article{Lee2007Copper, title={Copper metalized ohmic contact electrode of compound device}, author={Lee, Cheng-Shih and Chang, Edward Yi and Chen, Ke-Shian}, journal={http://hdl.handle.net/11536/105645}, year={2007}, url={http://ir.lib.nycu.edu.tw/handle/11536/105645}, }