Title: | Process of producing group III nitride based reflectors |
Authors: | Huang, Gensheng Yao, Hsin-Hung Kuo, Hao-Chung Wang, Shing-Chung |
Issue Date: | 7-Jun-2007 |
Abstract: | To solve the existing problems in distributed Bragg reflectors (DBR) used in the prior art, the present invention provides a fabrication method of group III nitride based distributed Bragg reflectors (DBR) for vertical cavity surface emitting lasers (VCSELs), which suppresses the generation of cracks, and a distributed Bragg reflector with high reflectivity, broad stopband, and adaptability to optical devices such as vertical cavity surface emitting lasers, micro-cavity light emitting diodes, resonance cavity light emitting diodes and photodetectors. |
Gov't Doc #: | H01L021/00 H01L033/00 |
URI: | http://hdl.handle.net/11536/105652 |
Patent Country: | USA |
Patent Number: | 20070128743 |
Appears in Collections: | Patents |
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