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dc.contributor.author陳冠能en_US
dc.contributor.author張耀仁en_US
dc.date.accessioned2015-12-04T07:03:36Z-
dc.date.available2015-12-04T07:03:36Z-
dc.date.issued2015-12-01en_US
dc.identifier.govdocH01L023/52zh_TW
dc.identifier.govdocH01L021/768zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/128817-
dc.description.abstract一種半導體元件之內連接結構,架構於一半導體基材內,該內連接結構包括:一第一矽晶直通孔,貫穿該半導體基材;以及一第二矽晶直通孔,貫穿該半導體基材,該第一矽晶直通孔與該第二矽晶直通孔相互間隔一距離,其中,該第一矽晶直通孔與該第二矽晶直通孔相互電性絕緣,且該距離介於2μm以及40μm之間。zh_TW
dc.language.isozh_TWen_US
dc.title半導體元件之內連接結構zh_TW
dc.typePatentsen_US
dc.citation.patentcountryTWNzh_TW
dc.citation.patentnumberI511257zh_TW
Appears in Collections:Patents


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