Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 陳冠能 | en_US |
| dc.contributor.author | 張耀仁 | en_US |
| dc.date.accessioned | 2015-12-04T07:03:36Z | - |
| dc.date.available | 2015-12-04T07:03:36Z | - |
| dc.date.issued | 2015-12-01 | en_US |
| dc.identifier.govdoc | H01L023/52 | zh_TW |
| dc.identifier.govdoc | H01L021/768 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/128817 | - |
| dc.description.abstract | 一種半導體元件之內連接結構，架構於一半導體基材內，該內連接結構包括：一第一矽晶直通孔，貫穿該半導體基材；以及一第二矽晶直通孔，貫穿該半導體基材，該第一矽晶直通孔與該第二矽晶直通孔相互間隔一距離，其中，該第一矽晶直通孔與該第二矽晶直通孔相互電性絕緣，且該距離介於2μm以及40μm之間。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 半導體元件之內連接結構 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | I511257 | zh_TW |
| Appears in Collections: | Patents | |
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