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dc.contributor.authorShui, Chi-Huien_US
dc.contributor.authorChen, Hung-Mingen_US
dc.date.accessioned2017-04-21T06:49:15Z-
dc.date.available2017-04-21T06:49:15Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-1616-5en_US
dc.identifier.urihttp://hdl.handle.net/11536/135065-
dc.description.abstractDue to advanced technology manufacturing variations, dummy metal insertion becomes the key, process of VLSI fabrication in reducing wafer-topography variation in Al-based and Cu-based [4] chemical mechanical polishing(CMP) processes. In this paper, we propose a faster and more effective approach to dealing with inter-layer dielectric (ILD) CMP issue, called Effective Model-based Dummy Insertion (EMDI). EMDI selects panels to insert dummy metal by effective CMP low pass filter model [8], and obtain feasible solutions with good quality based on minimized effective density. Compared with previous linear programming approach [10] that costs O(n(3)) (pale have n * n panels in chip layout), EMDI is quite fast in O(n log n) which is dominate by fast fourier transformation, same complexity as in [11]. Multi-layer dummy metal insertion is considered in our framework as well. The experiments on a real design show that our approach has outperformed the approach in [11], and is more efficient and effective in the smoothness of metal layers.en_US
dc.language.isoen_USen_US
dc.titleOn minimizing topography variation in multi-layer oxide CMP manufacturabilityen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2008 INTERNATIONAL SYMPOSIUM ON VLSI DESIGN, AUTOMATION AND TEST (VLSI-DAT), PROCEEDINGS OF TECHNICAL PROGRAMen_US
dc.citation.spage39en_US
dc.citation.epage+en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000256565800009en_US
dc.citation.woscount0en_US
Appears in Collections:Conferences Paper