A Resistance-Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage-Class Memory Applications

Title:	A Resistance-Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100x for Storage-Class Memory Applications
Authors:	Khwa, Win-San Chang, Meng-Fan Wu, Jau-Yi Lee, Ming-Hsiu Su, Tzu-Hsiang Yang, Keng-Hao Chen, Tien-Fu Wang, Tien-Yen Li, Hsiang-Pang BrightSky, Matthew Kim, SangBum Lung, Hsiang-Lam Lam, Chung 交大名義發表 National Chiao Tung University
Issue Date:	2016
URI:	http://hdl.handle.net/11536/136197
ISBN:	978-1-4673-9467-3
ISSN:	0193-6530
Journal:	2016 IEEE INTERNATIONAL SOLID-STATE CIRCUITS CONFERENCE (ISSCC)
Volume:	59
Begin Page:	134
End Page:	U179
Appears in Collections:	Conferences Paper