完整后设资料纪录
DC 栏位语言
dc.contributor.author张尹伦zh_TW
dc.contributor.author李佩雯zh_TW
dc.contributor.authorChang,Yin-Lunen_US
dc.contributor.authorLi, Pei-Wenen_US
dc.date.accessioned2018-01-24T07:42:35Z-
dc.date.available2018-01-24T07:42:35Z-
dc.date.issued2017en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070450177en_US
dc.identifier.urihttp://hdl.handle.net/11536/142696-
dc.description.abstract本论文将一步骤氧化形成锗量子点/二氧化矽/矽锗之异质结构制作于金氧半场效电晶体之通道区。利用SOI基板本身之Buried oxide作为披覆层,氮化矽二维锥形波导作为核心层提供对接耦合(Butt couple)的媒介;闸极金属选用可透光之氧化铟锡作为电极。以干蚀刻调控闸氧化层厚度至38.5 nm及3.5 nm,并以锗量子点及矽锗作为光吸收材料,制作出可供垂直入射及侧向入射量测之光电晶体。
闸氧化层厚度3.5 nm元件在未照光下,常温所量测之次临限斜率为80 mV/decade,元件开关电流比值达到3.41×108 A/A,显示极佳的闸极调控能力。当元件关闭时,以功率约1.9 mW,波长850 nm、1310 nm及1550 nm光垂直入射下,分别得到108、300及30 A/A之光增益;当元件开启时,以功率约0.1 μW,波长850 nm、1310 nm及1550 nm光垂直入射下,光响应度分别为139.4、2.23及6.81 A/W。显示元件在近红外光波段具有优异的光侦测特性。端面研磨后进行闸氧化层厚度38.5 nm元件之侧向照光量测,在功率143 μW,波长850 nm侧向入射光下,有15.3倍的光增益。波导整合的光侦测元件将使光连结系统的更加容易及可行。
zh_TW
dc.description.abstractIn this thesis, we fabricated a heterostructure of Ge Quantum Dots/SiO2/SiGe in the channel of a MOSFET in a single oxidation step. Applying the buried oxide layer of SOI substrate and the 2-D tapered Si3N4 waveguide as the cladding and core layer for butt-coupling, respectively. For normal incidence optimal transmission, we chose ITO as the gate electrode. In other words, we demonstrated a waveguided phototransistor which can be measured either by normal incidence or lateral incidence, the absorption layer consists of Ge QDs and SiGe shell . We controlled the gate oxide thickness of 38.5 nm and 3.5 nm by means of dry etching.
In the darkness, good switching behavior (subthreshold swing of 80 mV/decade), and high on/off ratio (Ion/Ioff = 3.41×108 A/A) were measured on the phototransistor with tox=3.5 nm at 300K. At off state, photocurrent gains are 108, 300, and 30 A/A under a normal incidence power of about 1.9 mW at 850 nm, 1310 nm, and 1550 nm, respectively. At on state, photoresponsivities are 139.4, 2.23, 6.81 A/W under a normal incidence power of about 0.1 μW at 850 nm, 1310 nm, and 1550 nm, respectively. Indicating that the phototransistor has a significant photodetection in the near-infrared regime. After the edge polishing, photocurrent gain value of 15.3 A/A under a lateral incidence power of 143 μW at 850 nm are measured on the phototransistor with tox=38.5 nm. The waveguided phototransistor would provide a better access to Si optical interconnect and make the integration more feasible.
en_US
dc.language.isozh_TWen_US
dc.subject光电晶体zh_TW
dc.subject氮化矽波导zh_TW
dc.subject锗量子点zh_TW
dc.subjectPhototransistoren_US
dc.subjectwaveguide-coupleden_US
dc.subjectGemanium Quantum Dotsen_US
dc.title氮化矽波导整合锗量子点光电晶体之研制及分析zh_TW
dc.titleFabrication and Characterization of Waveguided Ge Quantum Dots Phototransistoren_US
dc.typeThesisen_US
dc.contributor.department电子研究所zh_TW
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