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dc.contributor.authorWu, Po-Chingen_US
dc.contributor.authorHsu, Shun-Chiehen_US
dc.contributor.authorJhen, Yun-Hanen_US
dc.contributor.authorDong, Yao-Zhongen_US
dc.contributor.authorLing, Yan-Zhangen_US
dc.contributor.authorHsu, Lung-Hsingen_US
dc.contributor.authorKuo, Hao-Chungen_US
dc.contributor.authorLin, Chien-Chungen_US
dc.date.accessioned2018-08-21T05:56:42Z-
dc.date.available2018-08-21T05:56:42Z-
dc.date.issued2016-01-01en_US
dc.identifier.issn0160-8371en_US
dc.identifier.urihttp://hdl.handle.net/11536/146536-
dc.description.abstractIn this work, we demonstrate the doping concentration and positioning effect of the type-II quantum well (QR) on the solar cell performances in terms of numerical simulation. The variation in doping concentration and location can affect the band diagram seriously and possibly form the back surface field which can either facilitate or deteriorate the carrier collection. A wide range of parameters are calculated to reveal this trend and the previous experimental results are also discussed.en_US
dc.language.isoen_USen_US
dc.subjectType-II heterojunctionen_US
dc.subjectQuantum ringsen_US
dc.subjectsolar cellsen_US
dc.subjectGaAsen_US
dc.subjectGaSben_US
dc.subjectConcentrated sunlight operationsen_US
dc.titleNumerical Study on Doping and Positioning Effect of Type-II GaSb/GaAs Quantum Ring Layer on Solar Cell Performancesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC)en_US
dc.citation.spage2115en_US
dc.citation.epage2117en_US
dc.contributor.department光電系統研究所zh_TW
dc.contributor.department照明與能源光電研究所zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentInstitute of Photonic Systemen_US
dc.contributor.departmentInstitute of Lighting and Energy Photonicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000399818702032en_US
Appears in Collections:Conferences Paper


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