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dc.contributor.authorKang, Xiao-Ruien_US
dc.contributor.authorKer, Ming-Douen_US
dc.date.accessioned2018-08-21T05:57:09Z-
dc.date.available2018-08-21T05:57:09Z-
dc.date.issued2017-01-01en_US
dc.identifier.urihttp://hdl.handle.net/11536/147106-
dc.description.abstractA new on-chip transient detection circuit for system-level electrostatic discharge (ESD) protection is presented in this work. The circuit simulation and experimental results with silicon testchip in a 0.18-mu m CMOS process have continued that the new proposed circuit can successfully detect the occurrence of system-level ESD-induced electrical transient disturbance. The detection output can be used as system recovery index to restore the system from frozen or upset state to a stable and known state. Therefore, the immunity of microelectronic products against the system-level ESD test can be effectively enhanced.en_US
dc.language.isoen_USen_US
dc.subjecttransient detection circuiten_US
dc.subjectelectrostatic discharge (ESD)en_US
dc.subjectsystem-level ESDen_US
dc.subjectelectromagnetic susceptibility (EMS)en_US
dc.titleNew On-Chip Transient Detection Circuit to Improve Electromagnetic Susceptibility of Microelectronic Systemsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2017 INTERNATIONAL CONFERENCE ON ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000426985900117en_US
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