完整后设资料纪录
DC 栏位语言
dc.contributor.authorWang, Changanen_US
dc.contributor.authorChang, Ching-Haoen_US
dc.contributor.authorHerklotz, Andreasen_US
dc.contributor.authorChen, Chaoen_US
dc.contributor.authorGanss, Fabianen_US
dc.contributor.authorKentsch, Ulrichen_US
dc.contributor.authorChen, Deyangen_US
dc.contributor.authorGao, Xingsenen_US
dc.contributor.authorZeng, Yu-Jiaen_US
dc.contributor.authorHellwig, Olaven_US
dc.contributor.authorHelm, Manfreden_US
dc.contributor.authorGemming, Sibylleen_US
dc.contributor.authorChu, Ying-Haoen_US
dc.contributor.authorZhou, Shengqiangen_US
dc.date.accessioned2020-05-05T00:02:20Z-
dc.date.available2020-05-05T00:02:20Z-
dc.date.issued1970-01-01en_US
dc.identifier.issn2199-160Xen_US
dc.identifier.urihttp://dx.doi.org/10.1002/aelm.202000184en_US
dc.identifier.urihttp://hdl.handle.net/11536/154145-
dc.description.abstractThe topological Hall effect (THE) has been discovered in ultrathin SrRuO3 (SRO) films, where the interface between the SRO layer and another oxide layer breaks the inversion symmetry resulting in the appearance of THE. Thus, THE only occurs in ultrathin SRO films of several unit cells. In addition to employing a heterostructure, the inversion symmetry can be broken intrinsically in bulk SRO by introducing defects. In this study, THE is observed in 60-nm-thick SRO films, in which defects and lattice distortions are introduced by helium ion irradiation. The irradiated SRO films exhibit a pronounced THE in a wide temperature range from 5 to 80 K. These observations can be attributed to the emergence of Dzyaloshinskii-Moriya interaction as a result of artificial inversion symmetry breaking associated with the lattice defect engineering. The creation and control of the THE in oxide single layers can be realized by ex situ film processing. Therefore, this work provides new insights into the THE and illustrates a promising strategy to design novel spintronic devices.en_US
dc.language.isoen_USen_US
dc.subjectdefect engineeringen_US
dc.subjectDzyaloshinskii-Moriya interactionen_US
dc.subjectlattice distortionen_US
dc.subjectoxide thin filmsen_US
dc.subjecttopological Hall effecten_US
dc.titleTopological Hall Effect in Single Thick SrRuO3 Layers Induced by Defect Engineeringen_US
dc.typeArticleen_US
dc.identifier.doi10.1002/aelm.202000184en_US
dc.identifier.journalADVANCED ELECTRONIC MATERIALSen_US
dc.citation.spage0en_US
dc.citation.epage0en_US
dc.contributor.department材料科学与工程学系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000525918000001en_US
dc.citation.woscount0en_US
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