應用於高能電子-正子對撞之雙面矽微條探測器

Abstract

一種具有耦合電容和複晶矽偏壓電阻的新式雙面矽微條探測器已經被設計 完成並且在100mm 的矽晶圓上製造出來。為了使雙面的輸出端能轉成一方 向，雙層金屬結構亦應用上。P 型微條的間距為25微米，N 型微條的間距 為50微米。而其讀出間距分別為50微米和100 微米。這些製作完成的探測 器分別做電性量測與紅外線雷射照射試驗。其電性與空間響應均證實這些 雙面矽微條探測器完全符合我們的原始要求。 A new double-sided silicon microstrip detector with coupling capacitors and polysilicon bias resistors has been designed and processed on 100mm silicon wafers. The double-metal structure is also used to turn the output terminal of both sides in the same direction. The pitch of P﹢-trips is 25μｍ and the pitch of N﹢-strips is 50μｍ. The readout pitch of both are 50μｍ and 100μｍ, respectively. The detectors are tested by electrical measurement and illumination of infrared laser diode. The electrical properties and the spatial response show that these double-sided silicon microstrip detector do fit our original requirements.