Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region

Title:	Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region
Authors:	Wu, Yu-Sheng Su, Pin 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Keywords:	Gate-all-around (GAA);MOSFET;quantum effects;short-channel effect
Issue Date:	1-Nov-2009
Abstract:	This paper presents an analytical model for quantum-confinement effects in short-channel gate-all-around (GAA) MOSFETs under the subthreshold region. Our analytical model accurately predicts the impact of short-channel effects and doping concentration on the quantum-confinement effects. This scalable quantum-confinement model is crucial to the ultrascaled GAA MOSFET design.
URI:	http://dx.doi.org/10.1109/TED.2009.2030714 http://hdl.handle.net/11536/6471
ISSN:	0018-9383
DOI:	10.1109/TED.2009.2030714
Journal:	IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume:	56
Issue:	11
Begin Page:	2720
End Page:	2725
Appears in Collections:	Articles

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APA	Wu, Y., & Su, P. (2009). Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region. WOS:000271019500044.
Bibtex	@article{Wu2009Analytical, title={Analytical Quantum-Confinement Model for Short-Channel Gate-All-Around MOSFETs Under Subthreshold Region}, author={Wu, Yu-Sheng and Su, Pin}, journal={WOS:000271019500044}, year={2009}, url={http://ir.lib.nycu.edu.tw/handle/11536/6471}, }