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dc.contributor.author黄凯风en_US
dc.contributor.authorHUANG KAI-FENGen_US
dc.date.accessioned2014-12-13T10:37:07Z-
dc.date.available2014-12-13T10:37:07Z-
dc.date.issued1999en_US
dc.identifier.govdocNSC88-2112-M009-029zh_TW
dc.identifier.urihttp://hdl.handle.net/11536/94395-
dc.identifier.urihttps://www.grb.gov.tw/search/planDetail?id=426214&docId=76107en_US
dc.description.sponsorship行政院国家科学委员会zh_TW
dc.language.isozh_TWen_US
dc.subject氮化合物zh_TW
dc.subject分子束磊晶zh_TW
dc.subject异质结构zh_TW
dc.subject二维电子气zh_TW
dc.subject量子结构zh_TW
dc.subjectNitrideen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectHeterostructureen_US
dc.subjectTwo-dimension electronic gasen_US
dc.subjectQuantum effecten_US
dc.title分子束磊晶所长III-V氮化合物半导体之光电研究zh_TW
dc.titleAn Optical Study of III-V Nitride Semiconductor Quantum Structures Grown by MBEen_US
dc.typePlanen_US
dc.contributor.department交通大学电子物理系zh_TW
显示于类别:Research Plans