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公開日期標題作者
1-一月-2018Evaluation of a 100-nm Gate Length E-Mode InAs High Electron Mobility Transistor With Ti/Pt/Au Ohmic Contacts and Mesa Sidewall Channel Etch for High-Speed and Low-Power Logic ApplicationsYao, Jing-Neng; Lin, Yueh-Chin; Hsu, Heng-Tung; Yang, Kai-Chun; Hsu, Hisang-Hua; Sze, Simon M.; Chang, Edward Yi; 材料科學與工程學系; 光電系統研究所; 影像與生醫光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Photonic System; Institute of Imaging and Biomedical Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-二月-2020Study of E-Mode AlGaN/GaN MIS-HEMT with La-silicate Gate Insulator for Power ApplicationsHuang, Kuan Ning; Lin, Yueh-Chin; Lin, Jia-Ching; Hsu, Chia Chieh; Lee, Jin Hwa; Wu, Chia-Hsun; Yao, Jing Neng; Hsu, Heng-Tung; Nagarajan, Venkatesan; Kakushima, Kuniyuki; Tsutsui, Kazuo; Iwai, Hiroshi; Chien, Chao Hsin; Chang, Edward Yi; 材料科學與工程學系; 照明與能源光電研究所; 電子工程學系及電子研究所; 國際半導體學院; Department of Materials Science and Engineering; Institute of Lighting and Energy Photonics; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
1-一月-2019Study of Enhancement-Mode Tri-Gate InAs HEMTs for Low Noise ApplicationWang, C.; Lin, Y. C.; Kuo, C. N.; Lee, M. W.; Yao, J. N.; Huang, T. J.; Hsu, H. T.; Chang, Edward Y.; 電子工程學系及電子研究所; 國際半導體學院; Department of Electronics Engineering and Institute of Electronics; International College of Semiconductor Technology
2016以氧化鑭/二氧化矽堆疊式氧化層作為高功率增強型氮化鎵金屬-絕緣體-半導體高電子遷移率電晶體的閘極介電層之研究林佳慶; 張翼; 材料科學與工程學系所
2013砷化銦通道之高電子遷移率空乏型與增強型之高頻與邏輯數位之元件特性研究李宗運; 張翼; 張俊彥; CHANG,EDWARD YI; CHANG, CHUN-YEN; 電子工程學系 電子研究所
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