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Showing results 21 to 26 of 26 < previous 
Issue DateTitleAuthor(s)
1-May-1998A new simple and reliable method to form a textured Si surface for the fabrication of a tunnel oxide filmChang, KM; Li, CH; Sheih, BS; Yang, JY; Wang, SW; Yeh, TH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1996Reduction of selectivity loss probability on dielectric surface during chemical vapor deposition of tungsten using fluorinated oxide and removing silanol units on dielectric surfaceChang, KM; Wang, SW; Li, CH; Tsai, JY; Yeh, TH; 奈米中心; Nano Facility Center
1-Aug-1998The relaxation phenomena of positive charges in thin gate oxide during Fowler-Nordheim tunneling stressChang, KM; Li, CH; Wang, SW; Yeh, TH; Yang, JY; Lee, TC; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997SiH4-WF6 gas-phase nucleated tungsten as an adhesion layer in blanket chemical vapor deposition for ultralarge scale integrationChang, KM; Yeh, TH; Wang, SW; Li, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997SiH4-WF6 gas-phase nucleated tungsten as an adhesion layer in blanket chemical vapor deposition for ultralarge scale integrationChang, KM; Yeh, TH; Wang, SW; Li, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2002A VBR rate control using MINMAX criterion for video streamingLi, CH; Wang, CN; Chiang, TH; 資訊工程學系; 電子工程學系及電子研究所; Department of Computer Science; Department of Electronics Engineering and Institute of Electronics
Showing results 21 to 26 of 26 < previous