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Showing results 1 to 15 of 15
Issue DateTitleAuthor(s)
1-Feb-20011.55-mu m and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetectorLee, MK; Chu, CH; Wang, YH; Sze, SM; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Apr-2006Applications of the Web-based collaborative visualization in distributed product developmentChu, CH; Cheng, CY; Wu, CW; 資訊工程學系; Department of Computer Science
1-Jan-2006Computer aided parametric design for 3D tire mold productionChu, CH; Song, MC; Luo, VCS; 資訊工程學系; Department of Computer Science
1-Jul-1998Controlling the diffusion of implanted boron in Si and silicide by multiple implantsChu, CH; Ho, KJ; Huang, CT; Shvu, SH; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Nov-1999Defects in Ge+-preamorphized siliconChen, PS; Hsieh, TE; Hwang, YC; Chu, CH; 材料科學與工程學系; Department of Materials Science and Engineering
1-Mar-1996The influence of Ge-implantation on the electrical characteristics of the ultra-shallow junction formed by using silicide as a diffusion sourceHuang, CT; Lei, TF; Chu, CH; Shvu, SH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-Sep-1996Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistorChao, TS; Liaw, MC; Chu, CH; Chang, CY; Chien, CH; Hao, CP; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
16-Sep-1996Mechanism of nitrogen coimplant for suppressing boron penetration in p(+)-polycrystalline silicon gate of p metal-oxide semiconductor field effect transistorChao, TS; Liaw, MC; Chu, CH; Chang, CY; Chien, CH; Hao, CP; Lei, TF; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1998A modified morphological corner detectorLin, RS; Chu, CH; Hsueh, YC; 資訊工程學系; Department of Computer Science
2003A novel leakage current separation technique in a direct Tunneling regime gate oxide SONOS memory cellChung, SS; Chiang, PY; Chou, G; Huang, CT; Chen, P; Chu, CH; Hsu, CCH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
15-Mar-1999Removal of end-of-range defects in Ge+-pre-amorphized Si by carbon ion implantationChen, PS; Hsieh, TE; Chu, CH; 材料科學與工程學系; Department of Materials Science and Engineering
29-Sep-1999Solid phase epitaxy for low pressure chemical vapor deposition Si films induced by ion implantationChen, PS; Hsieh, TE; Chu, CH; 材料科學與工程學系; Department of Materials Science and Engineering
1-Dec-1996Suppression of boron penetration in BF2+-implanted poly-Si gateChao, TS; Chu, CH; Wang, CF; Ho, KJ; Lei, TF; Lee, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Dec-1996Suppression of boron penetration in BF2+-implanted poly-Si gateChao, TS; Chu, CH; Wang, CF; Ho, KJ; Lei, TF; Lee, CL; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Mar-1997Suppression of boron penetration in P+-poly-Si gate metal-oxide-semiconductor transistor using nitrogen implantationChao, TS; Chien, CH; Hao, CP; Liaw, MC; Chu, CH; Chang, CY; Lei, TF; Sun, WT; Hsu, CH; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
Showing results 1 to 15 of 15