Browsing by Author Huang, Sheng-Yao

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Showing results 1 to 11 of 11
Issue DateTitleAuthor(s)
2010Bipolar Resistive Switching Characteristics of Transparent Indium Gallium Zinc Oxide Resistive Random Access MemoryChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Tsai, Chih-Tsung; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Jan-2013Effect of Electrode Material on Resistive Switching Characteristics in TaON Nonvolatile Memory DevicesChen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Syu, Yong-En; Chang, Kuan-Chang; Huang, Hui-Chun; Tsai, Tsung-Ming; Gan, Der-Shin; Sze, Simon M.; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2013Improvement in the bias stability of amorphous InGaZnO TFTs using an Al2O3 passivation layerHuang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Te-Chih; Jian, Fu-Yen; Chen, Yu-Chun; Huang, Hui-Chun; Gan, Der-Shin; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
25-Dec-2009Improvement of the performance of ZnO TFTs by low-temperature supercritical fluid technology treatmentChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Kuan-Chang; Huang, Hui-Chun; Chen, Shih-Ching; Lu, Jin; Gan, Der-Shin; Ho, New-Jin; Young, Tai-Fa; Jhang, Geng-Wei; Tai, Ya-Hsiang; 顯示科技研究所; Institute of Display
28-Jun-2010Influence of electrode material on the resistive memory switching property of indium gallium zinc oxide thin filmsChen, Min-Chen; Chang, Ting-Chang; Tsai, Chih-Tsung; Huang, Sheng-Yao; Chen, Shih-Ching; Hu, Chih-Wei; Sze, Simon M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
2011Influence of Oxygen Partial Pressure on Resistance Random Access Memory Characteristics of Indium Gallium Zinc OxideChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Guan-Chang; Chen, Shih-Cheng; Huang, Hui-Chun; Hu, Chih-Wei; Sze, Simon M.; Tsai, Tsung-Ming; Gan, Der-Shin; Yeh (Huang), Fon-Shan; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
11-Jul-2011Investigating the degradation behavior caused by charge trapping effect under DC and AC gate-bias stress for InGaZnO thin film transistorChen, Te-Chih; Chang, Ting-Chang; Hsieh, Tien-Yu; Lu, Wei-Siang; Jian, Fu-Yen; Tsai, Chih-Tsung; Huang, Sheng-Yao; Lin, Chia-Sheng; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
20-Apr-2009A low-temperature method for improving the performance of sputter-deposited ZnO thin-film transistors with supercritical fluidChen, Min-Chen; Chang, Ting-Chang; Huang, Sheng-Yao; Chang, Kuan-Chang; Li, Hung-Wei; Chen, Shih-Ching; Lu, Jin; Shi, Yi; 光電工程學系; 顯示科技研究所; Department of Photonics; Institute of Display
15-Jan-2013The resistive switching characteristics in TaON films for nonvolatile memory applicationsChen, Min-Chen; Chang, Ting-Chang; Chiu, Yi-Chieh; Chen, Shih-Cheng; Huang, Sheng-Yao; Chang, Kuan-Chang; Tsai, Tsung-Ming; Yang, Kai-Hsiang; Sze, Simon M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2011Resistive switching characteristics of Sm(2)O(3) thin films for nonvolatile memory applicationsHuang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics
1-Sep-2011Resistive switching characteristics of Sm2O3 thin films for nonvolatile memory applicationsHuang, Sheng-Yao; Chang, Ting-Chang; Chen, Min-Chen; Chen, Shih-Ching; Lo, Hung-Ping; Huang, Hui-Chun; Gan, Der-Shin; Sze, Simon M.; Tsai, Ming-Jinn; 電子工程學系及電子研究所; Department of Electronics Engineering and Institute of Electronics