Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | 韋光華 | en_US |
| dc.contributor.author | 許鉦宗 | en_US |
| dc.contributor.author | 陳振嘉 | en_US |
| dc.contributor.author | 邱茂源 | en_US |
| dc.date.accessioned | 2014-12-16T06:12:46Z | - |
| dc.date.available | 2014-12-16T06:12:46Z | - |
| dc.date.issued | 2010-03-01 | en_US |
| dc.identifier.govdoc | H01L051/42 | zh_TW |
| dc.identifier.govdoc | H01L051/48 | zh_TW |
| dc.identifier.uri | http://hdl.handle.net/11536/103781 | - |
| dc.description.abstract | 本發明提供一種光電記憶體元件、其製造以及量測方法。根據本發明之光電記憶體元件,包含基板、絕緣層、主動層、源極以及汲極。該基板包含一閘極,且該絕緣層,形成於該基板上。該主動層,形成於該絕緣層上,特別地,該主動層係由包含共軛高分子材料以及量子點材料之複合材料所構成。該源極以及該汲極皆形成於該絕緣層上,並且皆電連接該主動層。 | zh_TW |
| dc.language.iso | zh_TW | en_US |
| dc.title | 光電記憶體元件、其製造以及量測方法 | zh_TW |
| dc.type | Patents | en_US |
| dc.citation.patentcountry | TWN | zh_TW |
| dc.citation.patentnumber | 201010156 | zh_TW |
| Appears in Collections: | Patents | |
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