標題: HIGH-VOLTAGE TOLERANT POWER-RAIL ESD CLAMP CIRCUIT
作者: Ker, Ming-Dou
Chen, Wen-Yi
公開日期: 4-Oct-2007
摘要: A high-voltage tolerant power-rail ESD clamp circuit is proposed, in which circuit devices can safely operate under the high power supply voltage that is three times larger than their process limitation without gate-oxide reliability issue. Moreover, an ESD detection circuit is used to effectively improve the whole ESD protection function by substrate-triggered technique. Because only low voltage (1*VDD) devices are used to achieve the object of high voltage (3*VDD) tolerance, the proposed design provides a cost effective power-rail ESD protection solution to chips with mixed-voltage interfaces.
官方說明文件#: H02H009/00
URI: http://hdl.handle.net/11536/105633
專利國: USA
專利號碼: 20070230073
Appears in Collections:Patents


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