標題: Discrete monolayer light emission from GaSb wetting layer in GaAs
作者: Lo, Ming-Cheng
Huang, Shyh-Jer
Lee, Chien-Ping
Lin, Sheng-Di
Yen, Shun-Tung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 11-Jun-2007
摘要: Distinct light emission peaks from monolayers of GaSb quantum wells in GaAs were observed. Discrete atomic layers of GaSb for the wetting layer prior to quantum dot formation give rise to transition peaks corresponding to quantum wells with 1, 2, and 3 ML. From the transition energies the authors were able to deduce the band offset parameter between GaSb and GaAs. By fitting the experimental data with the theoretical calculated result using an 8x8 k center dot p Burt's Hamiltonian along with the Bir-Picus deformation potentials, the strain-free (fully strained) valence band discontinuity for this type-II heterojunction was determined to be 0.45 eV (0.66 eV). (c) 2007 American Institute of Physics.
URI: http://dx.doi.org/10.1063/1.2748087
http://hdl.handle.net/11536/10691
ISSN: 0003-6951
DOI: 10.1063/1.2748087
期刊: APPLIED PHYSICS LETTERS
Volume: 90
Issue: 24
結束頁: 
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