標題: Large-area few-layer MoS2 deposited by sputtering
作者: Huang, Jyun-Hong
Chen, Hsing-Hung
Liu, Pang-Shiuan
Lu, Li-Syuan
Wu, Chien-Ting
Chou, Cheng-Tung
Lee, Yao-Jen
Li, Lain-Jong
Chang, Wen-Hao
Hou, Tuo-Hung
電子物理學系
電子工程學系及電子研究所
Department of Electrophysics
Department of Electronics Engineering and Institute of Electronics
關鍵字: MoS2;sputter;transition metal dichalcogenide
公開日期: Jun-2016
摘要: Direct magnetron sputtering of transition metal dichalcogenide targets is proposed as a new approach for depositing large-area two-dimensional layered materials. Bilayer to few-layer MoS2 deposited by magnetron sputtering followed by post-deposition annealing shows superior area scalability over 20 cm(2) and layer-by-layer controllability. High crystallinity of layered MoS2 was confirmed by Raman, photo-luminescence, and transmission electron microscopy analysis. The sputtering temperature and annealing ambience were found to play an important role in the film quality. The top-gate field-effect transistor by using the layered MoS2 channel shows typical n-type characteristics with a current on/off ratio of approximately 10(4). The relatively low mobility is attributed to the small grain size of 0.1-1 mu m with a trap charge density in grain boundaries of the order of 10(13) cm(-2).
URI: http://dx.doi.org/10.1088/2053-1591/3/6/065007
http://hdl.handle.net/11536/134153
ISSN: 2053-1591
DOI: 10.1088/2053-1591/3/6/065007
期刊: MATERIALS RESEARCH EXPRESS
Volume: 3
Issue: 6
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