標題: A comprehensive model for plasma damage enhanced transistor reliability degradation
作者: Weng, W. T.
Oates, A. S.
Huang, Tiao-Yuan
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2007
摘要: We present a comprehensive set of measurements to assess the impact of plasma processing induced damage on NBTI and hot carrier reliability as a function of technology scaling. We demonstrate for the first time that both hot carrier and NBTI are impacted similarly by device antenna ratio, transistor active area and gate oxide thickness, while failure distributions exhibit significant deviations from lognormal as a result of plasma damage. We develop a model to explain the observed experimental dependences and to accurately simulate failure distributions in the presence of plasma damage.
URI: http://dx.doi.org/10.1109/RELPHY.2007.369916
http://hdl.handle.net/11536/135136
ISBN: 978-1-4244-0918-1
ISSN: 1541-7026
DOI: 10.1109/RELPHY.2007.369916
期刊: 2007 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 45TH ANNUAL
起始頁: 364
結束頁: +
Appears in Collections:Conferences Paper