完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | 陳玟慈 | zh_TW |
dc.contributor.author | 劉柏村 | zh_TW |
dc.contributor.author | 楊界雄 | zh_TW |
dc.contributor.author | Chen, Wen-Tzu | en_US |
dc.contributor.author | Liu, Po-Tsun | en_US |
dc.contributor.author | Yang, Kei-Hsiung | en_US |
dc.date.accessioned | 2018-01-24T07:41:36Z | - |
dc.date.available | 2018-01-24T07:41:36Z | - |
dc.date.issued | 2017 | en_US |
dc.identifier.uri | http://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070458018 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/141982 | - |
dc.language.iso | en_US | en_US |
dc.subject | 背通道蝕刻 | zh_TW |
dc.subject | 氧化銦鎢 | zh_TW |
dc.subject | 氧化銦鎢鋅 | zh_TW |
dc.subject | 薄膜電晶體 | zh_TW |
dc.subject | 雙層主動層 | zh_TW |
dc.subject | Back-Channel Etched | en_US |
dc.subject | In-W-O | en_US |
dc.subject | In-W-Zn-O | en_US |
dc.subject | Thin Film Transistors | en_US |
dc.subject | Double Layer | en_US |
dc.title | 背通道蝕刻型雙層氧化銦鎢/氧化銦鎢鋅 薄膜電晶體技術之研究 | zh_TW |
dc.title | Study on Back-Channel Etched Double Layer In-W-O/In-W-Zn-O Thin Film Transistors Technology | en_US |
dc.type | Thesis | en_US |
dc.contributor.department | 光電系統研究所 | zh_TW |
顯示於類別: | 畢業論文 |