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dc.contributor.author陳玟慈zh_TW
dc.contributor.author劉柏村zh_TW
dc.contributor.author楊界雄zh_TW
dc.contributor.authorChen, Wen-Tzuen_US
dc.contributor.authorLiu, Po-Tsunen_US
dc.contributor.authorYang, Kei-Hsiungen_US
dc.date.accessioned2018-01-24T07:41:36Z-
dc.date.available2018-01-24T07:41:36Z-
dc.date.issued2017en_US
dc.identifier.urihttp://etd.lib.nctu.edu.tw/cdrfb3/record/nctu/#GT070458018en_US
dc.identifier.urihttp://hdl.handle.net/11536/141982-
dc.language.isoen_USen_US
dc.subject背通道蝕刻zh_TW
dc.subject氧化銦鎢zh_TW
dc.subject氧化銦鎢鋅zh_TW
dc.subject薄膜電晶體zh_TW
dc.subject雙層主動層zh_TW
dc.subjectBack-Channel Etcheden_US
dc.subjectIn-W-Oen_US
dc.subjectIn-W-Zn-Oen_US
dc.subjectThin Film Transistorsen_US
dc.subjectDouble Layeren_US
dc.title背通道蝕刻型雙層氧化銦鎢/氧化銦鎢鋅 薄膜電晶體技術之研究zh_TW
dc.titleStudy on Back-Channel Etched Double Layer In-W-O/In-W-Zn-O Thin Film Transistors Technologyen_US
dc.typeThesisen_US
dc.contributor.department光電系統研究所zh_TW
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