標題: Investigation of Gate-Stacked In-Ga-Zn-O TFTs with Ga-Zn-O Source/Drain Electrodes by Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition
作者: Wu, Chien-Hung
Chang, Kow-Ming
Chen, Yi-Ming
Huang, Bo-Wen
Zhang, Yu-Xin
Wang, Shui-Jinn
Hsu, Jui-Mei
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: AP-PECVD;IGZO-TFTs;AP-GZO Source/Drain;Gate Control Ability
公開日期: 1-Mar-2018
摘要: Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) was employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO TFTs) with high transparent gallium zinc oxide (GZO) source/drain electrodes. The influence of post-deposition annealing (PDA) temperature on GZO source/drain and device performance was studied. Device with a 300 degrees C annealing demonstrated excellent electrical characteristics with on/off current ratio of 2.13x10(8), saturation mobility of 10 cm(2)/V-s, and low subthreshold swing of 0.2 V/dec. The gate stacked LaAlO3/ZrO2 of AP-IGZO TFTs with highly transparent and conductive AP-GZO source/drain electrode show excellent gate control ability at a low operating voltage.
URI: http://dx.doi.org/10.1166/jnn.2018.14977
http://hdl.handle.net/11536/144590
ISSN: 1533-4880
DOI: 10.1166/jnn.2018.14977
期刊: JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Volume: 18
起始頁: 2054
結束頁: 2057
Appears in Collections:Articles