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dc.contributor.authorLee, WIen_US
dc.contributor.authorYoung, RLen_US
dc.contributor.authorChen, WKen_US
dc.date.accessioned2019-04-02T05:58:23Z-
dc.date.available2019-04-02T05:58:23Z-
dc.date.issued1996-09-15en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.35.L1158en_US
dc.identifier.urihttp://hdl.handle.net/11536/149319-
dc.description.abstractA method is proposed for performing deep level transient spectroscopy depth profile measurements of defects in polycrystalline ZnO. A multilayer-chip ZnO varistor structure is adopted to minimize the number of grains connected in series. It is verified that the distributions of some defects near the ZnO grain boundary are highly nonuniform. Valuable information has been obtained from the measured defect distribution profiles.en_US
dc.language.isoen_USen_US
dc.subjectZnO varistoren_US
dc.subjectdefecten_US
dc.subjectdeep levelen_US
dc.subjectDLTSen_US
dc.subjectdepth profile measurementen_US
dc.titleDeep level transient spectroscopy depth profile measurements of polycrystalline zinc oxide ceramicen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.35.L1158en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERSen_US
dc.citation.volume35en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1996VK41200005en_US
dc.citation.woscount11en_US
Appears in Collections:Articles


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