標題: Improved characteristics for Pd nanocrystal memory with stacked HfAlO-SiO2 tunnel layer
作者: Kang, Tsung-Kuei
Liu, Han-Wen
Wang, Fang-Hsing
Lin, Cheng-Li
Liao, Ta-Chuan
Wu, Wen-Fa
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: HfAlO-SiO2 tunnel layer;Pd nanocrystal;Thermally induced trap;Asymmetric tunnel barrier;N-2 plasma;Memory characteristic
公開日期: 1-Jul-2011
摘要: Stacked HfAlO-SiO2 tunnel layers are designed for Pd nanocrystal nonvolatile memories. For the sample with 1.5 nm-HfAlO/3.5 nm-SiO2 tunnel layer, a smaller initial memory window is obtained compared to the sample with 3.5 nm-HfAlO/1.5 nm-SiO2 tunnel layer. Owing to the thermally induced traps in HfAlO-SiO2 films are located at a farther distance from the Si substrate and more effective blocking of charge leakage by asymmetric tunnel barrier, a larger final memory window and better retention characteristic can be obtained for Al/blocking oxide SiO2/Pd NC5/1.5 nm-HfAlO/3.5 nm-SiO2/Si structure. A N-2 plasma treatment can further improve the memory characteristics. Better memory characteristics can be obtained for Pd-nanocrystal-based nonvolatile memory with an adequate thickness ratio of HfAlO to SiO2. (C) 2011 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.sse.2011.02.003
http://hdl.handle.net/11536/150318
ISSN: 0038-1101
DOI: 10.1016/j.sse.2011.02.003
期刊: SOLID-STATE ELECTRONICS
Volume: 61
起始頁: 100
結束頁: 105
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