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dc.contributor.authorLiu, W. -R.en_US
dc.contributor.authorLin, B. H.en_US
dc.contributor.authorYang, S.en_US
dc.contributor.authorKuo, C. C.en_US
dc.contributor.authorLi, Y. -H.en_US
dc.contributor.authorHsu, C. -H.en_US
dc.contributor.authorHsieh, W. F.en_US
dc.contributor.authorLee, W. C.en_US
dc.contributor.authorHong, M.en_US
dc.contributor.authorKwo, J.en_US
dc.date.accessioned2014-12-08T15:21:30Z-
dc.date.available2014-12-08T15:21:30Z-
dc.date.issued2012en_US
dc.identifier.issn1466-8033en_US
dc.identifier.urihttp://hdl.handle.net/11536/15275-
dc.identifier.urihttp://dx.doi.org/10.1039/c2ce06218fen_US
dc.description.abstractThe structural, optical and electrical properties of the c-plane ZnO epitaxial films grown by pulsed laser deposition on a Si(111) substrate buffered with a thin layer of gamma-Al2O3 were investigated by X-ray diffraction, transmission electron microscopy, photoluminescence (PL) and Hall measurements. Detailed structural investigation showed that the dominant structural defects in the ZnO films are threading dislocations (TDs). Experimental results manifest the edge-and screw-type of TDs influence the optical and electric properties differently; the intensity ratio between the PL yellow-green band to near band edge emission and the carrier concentration are affected mainly by the edge TD, and the FWHM of the near band edge emission is dominantly influenced by the screw TD.en_US
dc.language.isoen_USen_US
dc.titleThe influence of dislocations on optical and electrical properties of epitaxial ZnO on Si (111) using a gamma-Al2O3 buffer layeren_US
dc.typeArticleen_US
dc.identifier.doi10.1039/c2ce06218fen_US
dc.identifier.journalCRYSTENGCOMMen_US
dc.citation.volume14en_US
dc.citation.issue5en_US
dc.citation.spage1665en_US
dc.citation.epage1671en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000300045200024-
dc.citation.woscount5-
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