Pseudo-van der Waals Epitaxy of MoS2 on Patterned and Planar GaN Substrates

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Liu, Che-yu	en_US
dc.contributor.author	Choi, Wonsik	en_US
dc.contributor.author	Huang, Hsien-chih	en_US
dc.contributor.author	Kim, Jeongdong	en_US
dc.contributor.author	Jung, Kyooho	en_US
dc.contributor.author	Zhou, Weidong	en_US
dc.contributor.author	Kuo, Hao-chung	en_US
dc.contributor.author	Li, Xiuling	en_US
dc.date.accessioned	2019-10-05T00:09:43Z	-
dc.date.available	2019-10-05T00:09:43Z	-
dc.date.issued	2019-01-01	en_US
dc.identifier.isbn	978-1-943580-57-6	en_US
dc.identifier.issn	2160-9020	en_US
dc.identifier.uri	http://hdl.handle.net/11536/152920	-
dc.description.abstract	n-MoS2/p-GaN diodes monolithically formed by pseudo-van der Waals epitaxy show well-defined rectifying behavior. Growth on patterned GaN substrates yields monolayer and few-layer MoS2 formation on the planar surface and the pyramids, respectively. (c) 2019 The Author(s)	en_US
dc.language.iso	en_US	en_US
dc.title	Pseudo-van der Waals Epitaxy of MoS2 on Patterned and Planar GaN Substrates	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2019 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)	en_US
dc.citation.spage	0	en_US
dc.citation.epage	0	en_US
dc.contributor.department	光電工程學系	zh_TW
dc.contributor.department	光電工程研究所	zh_TW
dc.contributor.department	Department of Photonics	en_US
dc.contributor.department	Institute of EO Enginerring	en_US
dc.identifier.wosnumber	WOS:000482226302151	en_US
dc.citation.woscount	0	en_US
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