A characteristic improved technique and analysis with plasma treatment to the electrode on oxide-based resistive random access memory

Abstract

A technique was proposed to concentrate the distribution of set voltages. After a plasma treatment, the stability of the high-resistive state (HRS) increased, and the distribution of set voltages was more concentrated at 0.8 V, with a sufficient HRS/LRS resistive ratio (similar to 100x). In addition, the surface of the TiN electrode became rougher, causing oxygen to enter the TiN electrode and form a TiON layer, which acts as an oxygen reservoir. The reservoir is confirmed and the conduction model is supported by both electrical and material analyses. We propose that the observed improvement is due to the difference in the TiN electrode surface. (C) 2019 Published by Elsevier B.V.