標題: Low-Frequency Noise Characterization of AlGaN & x002F;GaN HEMTs and MIS-HEMTs Under UV Illumination
作者: Nagarajan, Venkatesan
Chen, Kun-Ming
Lin, Hsin-Yi
Hu, Hsin-Hui
Huang, Guo-Wei
Lin, Chuang-Ju
Chen, Bo-Yuan
Anandan, Deepak
Singh, Sankalp Kumar
Wu, Chai-Hsun
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: HEMTs;MODFETs;Logic gates;Aluminum gallium nitride;Wide band gap semiconductors;Gallium nitride;Low-frequency noise;GaN;HEMT;low-frequency noise;optoelec- tronic;UV illumination
公開日期: 1-Jan-2020
摘要: The low-frequency noise characteristics of AlGaN & x002F;GaN HEMTs and MIS-HEMTs are investigated in the dark condition and under UV illumination. The test devices with a 3-& x03BC;m-thick GaN buffer and a 25-nm-thick Al<sub>0.22</sub>Ga<sub>0.78</sub>N barrier layer were fabricated on the silicon wafer. For MIS-HEMTs, a 25-nm-thick SiN layer was deposited as a gate dielectric. The measured low-frequency noises show a 1 & x002F;f spectrum and can be described by the carrier number fluctuation model. Different noise responses to the UV light between HEMTs and MIS-HEMTs were observed. By comparing the noise data in dark and under UV illumination, the noise sources under the gate and in the ungated gate-drain access region have been identified. From these results, we can find a design guideline to improve the noise and reliability of GaN-based devices for optoelectronic applications.
URI: http://dx.doi.org/10.1109/TNANO.2020.2992732
http://hdl.handle.net/11536/154493
ISSN: 1536-125X
DOI: 10.1109/TNANO.2020.2992732
期刊: IEEE TRANSACTIONS ON NANOTECHNOLOGY
Volume: 19
起始頁: 405
結束頁: 409
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