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dc.contributor.authorChang, Chan-Chingen_US
dc.contributor.authorHwang, Shiao-Wenen_US
dc.contributor.authorHsieh, Ming-Taen_US
dc.contributor.authorMa, Jia-Weien_US
dc.contributor.authorChen, Chin H.en_US
dc.contributor.authorChen, Jenn-Fangen_US
dc.date.accessioned2014-12-08T15:25:31Z-
dc.date.available2014-12-08T15:25:31Z-
dc.date.issued2005en_US
dc.identifier.urihttp://hdl.handle.net/11536/17930-
dc.description.abstractWe demonstrate enhanced hole-injection and lower driving voltage in vacuum-deposited organic light-emitting diodes (OLEDs) with a novel tunneling junction composed of the Mg:Alq(3)/WO3 layer. The device, ITO/Mg:Alq(3)/WO3/NPB/Alq(3)/LiFAl achieved one of the lowest driving voltages of 5.8 V at 20mA/cm(2) for conventional small molecule OLEDs. We propose the laminated Mg:Alq(3)/WO3/NPB functions as a Fowler Nordheim tunneling junction, which can improve hole-injection. It was found to also prolong device lifetime under dc driving, that is comparable to the best reported for the Alq(3) emitter.en_US
dc.language.isoen_USen_US
dc.titleUsing tunneling junction to enhance hole-injection in organic light-emitting diodesen_US
dc.typeProceedings Paperen_US
dc.identifier.journalIDW/AD '05: PROCEEDINGS OF THE 12TH INTERNATIONAL DISPLAY WORKSHOPS IN CONJUNCTION WITH ASIA DISPLAY 2005, VOLS 1 AND 2en_US
dc.citation.spage687en_US
dc.citation.epage690en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000258488800176-
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