EFFECTS OF PRESSURE ON THE FORMATION OF PHOSPHORUS-DOPED MICROCRYSTALLINE SILICON FILMS DEPOSITED BY RADIO-FREQUENCY GLOW-DISCHARGE

doi:10.1063/1.359413

標題:	EFFECTS OF PRESSURE ON THE FORMATION OF PHOSPHORUS-DOPED MICROCRYSTALLINE SILICON FILMS DEPOSITED BY RADIO-FREQUENCY GLOW-DISCHARGE
作者:	FENG, MS LIANG, CW 材料科學與工程學系電子工程學系及電子研究所奈米中心 Department of Materials Science and Engineering Department of Electronics Engineering and Institute of Electronics Nano Facility Center
公開日期:	1-May-1995
URI:	http://dx.doi.org/10.1063/1.359413 http://hdl.handle.net/11536/1933
ISSN:	0021-8979
DOI:	10.1063/1.359413
期刊:	JOURNAL OF APPLIED PHYSICS
Volume:	77
Issue:	9
起始頁:	4771
結束頁:	4776
Appears in Collections:	Articles