标题: | High-kappa Eu2O3 and Y2O3 Poly-Si Thin-Film Transistor Nonvolatile Memory Devices |
作者: | Pan, Tung-Ming Yen, Li-Chen Huang, Sheng-Hao Lo, Chieh-Ting Chao, Tien-Sheng 电子物理学系 Department of Electrophysics |
关键字: | Charge-trapping layer;Eu2O3;low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT);Y2O3 |
公开日期: | 1-七月-2013 |
摘要: | In this paper, we have successfully fabricated low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) nonvolatile memory devices employing high-kappa Eu2O3 and Y2O3 films as the charge trapping layer. The LTPS-TFT memory device uses band-to-band tunneling-induced hot hole injection and gate Fowler-Nordheim injection as the program and erase methods, respectively. Compared with the Y2O3 film, the LTPS-TFT memory device using an Eu2O3 charge-trapping layer exhibited a lower subthreshold swing and a larger memory window, a smaller charge loss, and a better endurance performance, presumably because of the higher charge-trapping efficiency of the Eu2O3 film. |
URI: | http://dx.doi.org/10.1109/TED.2013.2261511 http://hdl.handle.net/11536/22247 |
ISSN: | 0018-9383 |
DOI: | 10.1109/TED.2013.2261511 |
期刊: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
Volume: | 60 |
Issue: | 7 |
起始页: | 2251 |
结束页: | 2255 |
显示于类别: | Articles |
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