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dc.contributor.authorHuang, Shih-Haoen_US
dc.contributor.authorChen, Wei-Zenen_US
dc.date.accessioned2014-12-08T15:34:51Z-
dc.date.available2014-12-08T15:34:51Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4799-0277-4978-1-4799-0280-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/23722-
dc.description.abstractThis paper presents a 20-Gb/s monolithically integrated CMOS optical receiver, integrating a photo detector, a transimpedance amplifier, and a post limiting amplifier on a single chip. Incorporating a 2-D meshed spatially-modulated light detector, the optical receiver achieves a record-high speed and is capable of delivering 80-dB Omega conversion gain when driving 50-Omega output loads. Nested-feedback topologies are adopted for transimpedance and post limiting amplifier design to achieve broad-band and high-gain operations without shunt-peaking inductors. Implemented in a generic 40-nm CMOS technology, the chip size is 0.6 x 0.54 mm(2). This receiver core drains 30 mW from 1-V supply.en_US
dc.language.isoen_USen_US
dc.subjectOEICen_US
dc.subjectOptical Receiveren_US
dc.subjectPhoto Detector (PD)en_US
dc.subjectTransimpedance Amplifier (TIA)en_US
dc.titleA 20-Gb/s Optical Receiver with Integrated Photo Detector in 40-nm CMOSen_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE 2013 IEEE ASIAN SOLID-STATE CIRCUITS CONFERENCE (A-SSCC)en_US
dc.citation.spage225en_US
dc.citation.epage228en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000330857500057-
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