完整後設資料紀錄
| DC 欄位 | 值 | 語言 |
|---|---|---|
| dc.contributor.author | Hsu, HC | en_US |
| dc.contributor.author | Cheng, CS | en_US |
| dc.contributor.author | Chang, CC | en_US |
| dc.contributor.author | Yang, S | en_US |
| dc.contributor.author | Chang, CS | en_US |
| dc.contributor.author | Hsieh, WF | en_US |
| dc.date.accessioned | 2014-12-08T15:35:05Z | - |
| dc.date.available | 2014-12-08T15:35:05Z | - |
| dc.date.issued | 2005-02-01 | en_US |
| dc.identifier.issn | 0957-4484 | en_US |
| dc.identifier.uri | http://dx.doi.org/10.1088/0957-4484/16/2/021 | en_US |
| dc.identifier.uri | http://hdl.handle.net/11536/23810 | - |
| dc.description.abstract | ZnO nanowires have been synthesized on porous silicon substrates with different porosities via the vapour-liquid-solid method. The texture coefficient analysed from the XRD spectra indicates that the nanowires are more highly orientated on the appropriate porosity of porous silicon substrate than on the smooth surface of silicon. The Raman spectrum reveals the high quality of the ZnO nanowires. From the temperature-dependent photoluminescence spectra, we deduced the activation energies of free and bound excitons. | en_US |
| dc.language.iso | en_US | en_US |
| dc.title | Orientation-enhanced growth and optical properties of ZnO nanowires grown on porous silicon substrates | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | 10.1088/0957-4484/16/2/021 | en_US |
| dc.identifier.journal | NANOTECHNOLOGY | en_US |
| dc.citation.volume | 16 | en_US |
| dc.citation.issue | 2 | en_US |
| dc.citation.spage | 297 | en_US |
| dc.citation.epage | 301 | en_US |
| dc.contributor.department | 光電工程學系 | zh_TW |
| dc.contributor.department | Department of Photonics | en_US |
| dc.identifier.wosnumber | WOS:000227408200022 | - |
| dc.citation.woscount | 68 | - |
| 顯示於類別: | 期刊論文 | |

