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dc.contributor.authorHsu, HCen_US
dc.contributor.authorCheng, CSen_US
dc.contributor.authorChang, CCen_US
dc.contributor.authorYang, Sen_US
dc.contributor.authorChang, CSen_US
dc.contributor.authorHsieh, WFen_US
dc.date.accessioned2014-12-08T15:35:05Z-
dc.date.available2014-12-08T15:35:05Z-
dc.date.issued2005-02-01en_US
dc.identifier.issn0957-4484en_US
dc.identifier.urihttp://dx.doi.org/10.1088/0957-4484/16/2/021en_US
dc.identifier.urihttp://hdl.handle.net/11536/23810-
dc.description.abstractZnO nanowires have been synthesized on porous silicon substrates with different porosities via the vapour-liquid-solid method. The texture coefficient analysed from the XRD spectra indicates that the nanowires are more highly orientated on the appropriate porosity of porous silicon substrate than on the smooth surface of silicon. The Raman spectrum reveals the high quality of the ZnO nanowires. From the temperature-dependent photoluminescence spectra, we deduced the activation energies of free and bound excitons.en_US
dc.language.isoen_USen_US
dc.titleOrientation-enhanced growth and optical properties of ZnO nanowires grown on porous silicon substratesen_US
dc.typeArticleen_US
dc.identifier.doi10.1088/0957-4484/16/2/021en_US
dc.identifier.journalNANOTECHNOLOGYen_US
dc.citation.volume16en_US
dc.citation.issue2en_US
dc.citation.spage297en_US
dc.citation.epage301en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000227408200022-
dc.citation.woscount68-
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