Preheating-temperature effect on structural and photoluminescent properties of sol-gel derived ZnO thin films

doi:10.1016/j.jlumin.2013.12.006

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DC 欄位	值	語言
dc.contributor.author	Chia, C. H.	en_US
dc.contributor.author	Tsai, W. C.	en_US
dc.contributor.author	Chou, W. C.	en_US
dc.date.accessioned	2014-12-08T15:36:25Z	-
dc.date.available	2014-12-08T15:36:25Z	-
dc.date.issued	2014-04-01	en_US
dc.identifier.issn	0022-2313	en_US
dc.identifier.uri	http://dx.doi.org/10.1016/j.jlumin.2013.12.006	en_US
dc.identifier.uri	http://hdl.handle.net/11536/24754	-
dc.description.abstract	We investigated he evolution of structural and low-temperature photoluminescence properties of sol-gel derived ZnO thin films, as a function of pre-heating temperature between 300 degrees C and 600 degrees C. The pre-heating crystallization plays an important role in the lineshape of PL spectra. The increase in pre-heating temperature enables rearrangement of atoms at the pre-heating stage, leading to c-axis oriented growth of films, modification in lineshape of impurity-detect emission, and reduction of deep-level emission intensity. (C) 2013 Elsevier B.V. All rights reserved	en_US
dc.language.iso	en_US	en_US
dc.subject	ZnO	en_US
dc.subject	Sol-gel	en_US
dc.subject	Photoluminescence	en_US
dc.subject	Exciton	en_US
dc.title	Preheating-temperature effect on structural and photoluminescent properties of sol-gel derived ZnO thin films	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1016/j.jlumin.2013.12.006	en_US
dc.identifier.journal	JOURNAL OF LUMINESCENCE	en_US
dc.citation.volume	148	en_US
dc.citation.issue		en_US
dc.citation.spage	111	en_US
dc.citation.epage	115	en_US
dc.contributor.department	電子物理學系	zh_TW
dc.contributor.department	Department of Electrophysics	en_US
dc.identifier.wosnumber	WOS:000337516000019	-
dc.citation.woscount	2	-
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