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dc.contributor.authorWang, DYen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:38:33Z-
dc.date.available2014-12-08T15:38:33Z-
dc.date.issued2004-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.1143/JJAP.43.6225en_US
dc.identifier.urihttp://hdl.handle.net/11536/26394-
dc.description.abstractIn this paper, we present a triangular current (TC) method for measuring the hysteresis loops of Pb(Zr,Ti)O-3 capacitors prepared on Pt/Ta/SiO2/Si substrates. Like the constant current (CC) method, this method is a current source mode method for obtaining hysteresis loops. By applying a triangular charging current to a specimen, a measured voltage profile, which is almost noiseless and smooth in the high-field region, is obtained and its hysteresis curve can be determined using integral calculus to convert the charging current to charge. Under various charging conditions, the similarity of the obtained hysteresis curves implies that the step charging current and number of steps do not affect the measured results. Moreover, the parasitic effect of the probe setup is found to possibly increase the maximum polarization of the ferroelectric capacitor as the area of the capacitor is reduced. The TC method can be utilized to determine the parasitic capacitance of the probe setup and then can easily determine the corrected hysteresis loops of small capacitors. These findings reveal that the TC method constitutes a new method for measuring the hysteresis loops of ferroelectric capacitors.en_US
dc.language.isoen_USen_US
dc.subjecthysteresis measurementen_US
dc.subjectferroelectric materialen_US
dc.subjectpolarizationen_US
dc.subjecttriangular current methoden_US
dc.titleTriangular current: Method for measuring hysteresis loops of ferroelectric capacitorsen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.43.6225en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERSen_US
dc.citation.volume43en_US
dc.citation.issue9Aen_US
dc.citation.spage6225en_US
dc.citation.epage6228en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000224579000061-
dc.citation.woscount2-
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