標題: Composite-channel metamorphic high electron mobility transistor for low-noise and high-linearity applications
作者: Chang, EY
Lin, YC
Chen, GJ
Lee, HM
Huang, GW
Biswas, D
Chang, CY
材料科學與工程學系
電子工程學系及電子研究所
友訊交大聯合研發中心
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
D Link NCTU Joint Res Ctr
關鍵字: MHEMT;composite channel;high linearity;low noise;IP3
公開日期: 1-Jul-2004
摘要: A metamorphic high-electron-mobility transistor (MHEMT) with In0.55Ga0.45As/In0.67Ga0.33As/In0.55Ga0.45As composite channel layers was developed for low-noise and high-linearity applications. The use of: a composite channel results in high electron mobility and good confinement of electrons in the channel region which are the desired characteristics of low-noise and high-linearity devices. The noise figure of the 0.25 x 160 mum(2) devices is 0.23 dB with 15.06 dB associated gain, and the output third-order intercept point (IP3) is 18.67 dBm at 6 GHz. The device shows great potential for high-linearity and low-noise applications at high frequencies.
URI: http://dx.doi.org/10.1143/JJAP.43.L871
http://hdl.handle.net/11536/26651
ISSN: 0021-4922
DOI: 10.1143/JJAP.43.L871
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS
Volume: 43
Issue: 7A
起始頁: L871
結束頁: L872
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