標題: ANGLE-RESOLVED REFLECTANCE SPECTROSCOPY OF PASSIVATED TRAPEZOID-CORN NANOSTRUCTURES FOR CRYSTALLINE SILICON PHOTOVOLTAICS
作者: Tseng, Ping-Chen
Chen, Hsin-Chu
Tsai, Min-An
Kuo, Hao-Chung
Yu, Peichen
光電工程學系
Department of Photonics
公開日期: 2010
摘要: In this work, we demonstrate an omnidirectional and broadband antireflective nanostructures incorporating a silicon nitrides (SiNx) passivation layer. The antireflective trapezoid-cone nanostructures are fabricated on a silicon wafer using polystyrene colloidal lithography with 550nm in height and then passivated with SiNx in different thicknesses to serve as the antireflection layer for silicon photovoltaics. The angle-resolved reflectance spectroscopy reveals that the trapezoid-cone nanostructures with an 80-nm-thick SiNx passivation layer effectively suppressed the Fresnel reflection over a broad spectral range and large angle of incidence (AOI). The AM1.5g weighted reflectance from 400 nm to 1000 nm is as low as 4.2% at normal incidence and <9.5% up to an AOI of 60 degrees, which is much superior to a conventional textured silicon substrate with passivation.
URI: http://hdl.handle.net/11536/27120
ISBN: 978-1-4244-5891-2
ISSN: 0160-8371
期刊: 35TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE
Appears in Collections:Conferences Paper