標題: Fermi and anti-Fermi glass transition and subband resonant quantum tunneling in Nb/Ti metallic multilayer films
作者: Lue, JT
Liang, SY
Lee, YW
Lue, HT
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Apr-2000
摘要: Multilayer of Nb/Ti and NbN/Ti films with 30 periodic structure were sputtered onto silicon substrates. The current-voltage characteristics measured along the vertical junction at low temperatures exhibit nonlinear step-wise curves. The resonant subband quantum tunneling in the metallic multiple quantum wells can satisfactorily express these peculiar behaviors. The Fermi and anti-Fermi glass transition showing itinerant metallic and insulating conduction properties are also observed at low currents and near critical temperatures.
URI: http://hdl.handle.net/11536/30633
ISSN: 0577-9073
期刊: CHINESE JOURNAL OF PHYSICS
Volume: 38
Issue: 2
起始頁: 339
結束頁: 344
Appears in Collections:Conferences Paper