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dc.contributor.authorLee, CJen_US
dc.contributor.authorHuang, LTen_US
dc.contributor.authorEzhilvalavan, Sen_US
dc.contributor.authorTseng, TYen_US
dc.date.accessioned2014-12-08T15:46:52Z-
dc.date.available2014-12-08T15:46:52Z-
dc.date.issued1999-03-01en_US
dc.identifier.issn1099-0062en_US
dc.identifier.urihttp://hdl.handle.net/11536/31505-
dc.description.abstractElectrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films subjected to an in situ two-step postannealing process were studied. Films treated by rapid thermal annealing in O-2 at 550 degrees C for 90 s followed by plasma O-2 at 550 degrees C for 30 s exhibit a leakage current density of 7.91 x 10(-9) A/cm(2) at an applied electric field of 100 kV/cm and a dielectric constant of similar to 38. The decrease in leakage current density of the annealed Ta2O5 films in comparison to the as-deposited films is attributed mainly to the effective reduction of carbon impurities and oxygen vacancies by the two-step postannealing process. (C) 1999 The Electrochemical Society. S1099-0062(98)08-064-X. All rights reserved.en_US
dc.language.isoen_USen_US
dc.titleElectrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin filmsen_US
dc.typeArticleen_US
dc.identifier.journalELECTROCHEMICAL AND SOLID STATE LETTERSen_US
dc.citation.volume2en_US
dc.citation.issue3en_US
dc.citation.spage135en_US
dc.citation.epage137en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000079697900012-
dc.citation.woscount3-
Appears in Collections:Articles


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