Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films

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DC 欄位	值	語言
dc.contributor.author	Lee, CJ	en_US
dc.contributor.author	Huang, LT	en_US
dc.contributor.author	Ezhilvalavan, S	en_US
dc.contributor.author	Tseng, TY	en_US
dc.date.accessioned	2014-12-08T15:46:52Z	-
dc.date.available	2014-12-08T15:46:52Z	-
dc.date.issued	1999-03-01	en_US
dc.identifier.issn	1099-0062	en_US
dc.identifier.uri	http://hdl.handle.net/11536/31505	-
dc.description.abstract	Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films subjected to an in situ two-step postannealing process were studied. Films treated by rapid thermal annealing in O-2 at 550 degrees C for 90 s followed by plasma O-2 at 550 degrees C for 30 s exhibit a leakage current density of 7.91 x 10(-9) A/cm(2) at an applied electric field of 100 kV/cm and a dielectric constant of similar to 38. The decrease in leakage current density of the annealed Ta2O5 films in comparison to the as-deposited films is attributed mainly to the effective reduction of carbon impurities and oxygen vacancies by the two-step postannealing process. (C) 1999 The Electrochemical Society. S1099-0062(98)08-064-X. All rights reserved.	en_US
dc.language.iso	en_US	en_US
dc.title	Electrical properties of rapid thermal-enhanced low pressure chemical vapor deposited Ta2O5 thin films	en_US
dc.type	Article	en_US
dc.identifier.journal	ELECTROCHEMICAL AND SOLID STATE LETTERS	en_US
dc.citation.volume	2	en_US
dc.citation.issue	3	en_US
dc.citation.spage	135	en_US
dc.citation.epage	137	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000079697900012	-
dc.citation.woscount	3	-
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