Highly scaled charge-trapping layer of ZrON nonvolatile memory device with good retention

Abstract

We have fabricated the TaN-[SiO(2)-LaAlO(3)]-ZrON-[LaAlO(3)-SiO(2)]-Si charge-trapping flash device with highly scaled 3.6 nm equivalent-Si(3)N(4)-thickness. This device shows large 4.9 V initial memory window, and good retention of 3.4 V ten-year extrapolated retention window at 85 degrees C, under very fast 100 mu s and low +/- 16 V program/erase. These excellent results were achieved using deep traps formed in ZrON trapping layer by As(+) implantation that was significantly better than those of control device without ion implantation. (C) 2010 American Institute of Physics. [doi:10.1063/1.3522890]