A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION

標題:	A COMPUTER-AIDED SIMULATION-MODEL FOR THE IV CHARACTERISTIC OF M-N-P SILICON SCHOTTKY-BARRIER DIODES PRODUCED BY USE OF LOW-ENERGY ARSENIC-ION IMPLANTATION
作者:	WU, CY CHANG, MC SHEY, AJ 交大名義發表電子物理學系 National Chiao Tung University Department of Electrophysics
公開日期:	1983
URI:	http://hdl.handle.net/11536/4938
ISSN:	0038-1101
期刊:	SOLID-STATE ELECTRONICS
Volume:	26
Issue:	9
起始頁:	893
結束頁:	900
Appears in Collections:	Articles