Operation of a Novel Device With Suspended Nanowire Channels

doi:10.1109/LED.2010.2041744

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Lin, Horng-Chih	en_US
dc.contributor.author	Kuo, Chia-Hao	en_US
dc.contributor.author	Li, Guan-Jang	en_US
dc.contributor.author	Su, Chun-Jung	en_US
dc.contributor.author	Huang, Tiao-Yuan	en_US
dc.date.accessioned	2014-12-08T15:06:58Z	-
dc.date.available	2014-12-08T15:06:58Z	-
dc.date.issued	2010-05-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/LED.2010.2041744	en_US
dc.identifier.uri	http://hdl.handle.net/11536/5450	-
dc.description.abstract	We investigate the operation of a new device featuring a side-gate scheme and suspended poly-Si nanowire (NW) channels. The fabrication adopted a sidewall-spacer-etching technique to form the poly-Si NW channels. The NW channels were further suspended using a simple wet-etching step. An interesting hysteresis phenomenon is observed in the I-V characteristics. In addition, a steep subthreshold swing (< 60 mV/dec) is also observed in the transfer curves. A scenario is proposed to explain the operation of such a device.	en_US
dc.language.iso	en_US	en_US
dc.subject	Hysteresis	en_US
dc.subject	MOSFET	en_US
dc.subject	nanowire (NW)	en_US
dc.subject	poly-Si	en_US
dc.title	Operation of a Novel Device With Suspended Nanowire Channels	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/LED.2010.2041744	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	31	en_US
dc.citation.issue	5	en_US
dc.citation.spage	384	en_US
dc.citation.epage	386	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000277047300001	-
dc.citation.woscount	8	-
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