標題: 矽基板與薄膜電晶體磁場感測器之研究
The Study of Si Bulk and TFT Magnetic Field Sensors
作者: 鄭志展
Jz-Jan Jeng
潘犀靈,雷添福
Ci-Ling Pan,Tan Fu Lei
光電工程學系
關鍵字: 霍爾效應,靈敏度,勞倫氏力;Hall effect,sensitivity,Lorentz force
公開日期: 1994
摘要: 在本論文中我們研製並測試兩種不同結構的三度空間矽基板磁場感測器,
其中, 第二種結構具有較深有效井深且對對電壓輸出形式能同時增加靈敏
度及對稱性, 而對差電流輸出形式則只有使磁場與表面平行的靈敏度 增
加。為增加靈敏度的對稱性, 鈷和鎳兩種鐵磁性材料被鍍在晶片背面以增
加垂直晶片方向的靈敏度, 經實驗證實增加了近十倍, 且得到靈敏度對稱
性相當理想。另外, 我們利用兩個分開汲極結構薄膜電晶體做磁場感測元
件並量測其特性, 發現其靈敏度隨不同閘極電極電壓有一最大值。
Magnetic field sensors which exploit the galvanomagnetic ef-
fect due to the Lorentz force on charge carriers have been
pres- ent for many years.In this study,magnetic field sensors
of two structures have been implemented and optimized in order
to inve- stigate the possibility of increasing the symmetry of
device se- nsitivities in three directions for 3-D magnetic-
field sensors. For Hall voltage output format,the p+ well of
the second struct- ure incteases the sensitivities in x-,y- and
z-directions and improve the symmtry of sensitivities.For
differential current output format,the p+ well can only
increase the sensitivities for an in-plane magnetic-field
applied. To improve the magnetic responses to magnetic field
perpendicular to the , wafer surface ,Co-Ni coating is used and
the sensitivities for a magnetic field applied perpendicularly
to the wafer surface are ten times more than that of a uncoated
device.Further,a 2-drain have been implemented for TFT magnetic
field sensors. Experimental results for this type of sensors
indicate that there is a maximum value of sensitivity for
various gate voltage.
URI: http://140.113.39.130/cdrfb3/record/nctu/#NT830123029
http://hdl.handle.net/11536/58883
Appears in Collections:Thesis