特殊的垂直放射雷射元件的封裝結構

Abstract

本論文欲以矽之異方性蝕刻技術，在矽晶片上製作一種具有四十 五度斜面之W型槽，並利用氧化犧牲法，使斜面更平整達光學程度。 在此結構上黏置邊射型半導體雷射，使其達到垂直發射的功能。此種 垂直發射的結構十分簡化雷射的包裝方式及成本。

This thesis is to study a novel technology of the fabrication of a vertical emitting semiconductor laser. This technique is a combination of an edgeemitting semiconductor laser and a silicon micro-machining W-groove which has forty-five degree mirror-like oblique planes made by oxidation- smooth method. With the edge emitting semiconductor laser packaged on the middle of the W-groove, reflected light will be perpendicular to the incident light, that is, as a vertical emitting semiconductor laser. This vertical emitting structure with simplifying laser package has the advantage for automation and cost lower.