碲摻雜磷化銦鋁之缺陷研究

Abstract

本文主要將以深層能階暫態頻譜分析技術來量測以有機金屬化學氣相磊晶法所成長碲摻雜磷化甸鋁材料中的深層能階缺陷，藉由接面二極體作為實驗樣本，可有效觀察材料中存在的多數載子與少數載子缺陷，利用不同的摻雜濃度及V/III比成長碲摻雜磷化銦鋁，將可研究不同成長環境下所存在的多數載子與少數載子缺陷，首先，分別以V/III比160、120及80成長磷化銦鋁，可發現在以V/III比160及120所成長的磷化銦鋁中僅存在一多數載子缺陷，其缺陷活化濃為0.24eV，經由缺陷空間分佈研究可判定此乃為一塊材缺陷型態，然而在以V/III比80成長的磷化銦鋁中，除前述的缺陷外尚可發現另一個缺陷存在，其缺陷活化能為0.648eV，由磊晶原理可判斷此乃由於磷空缺所形成。其次，以V/III比120下成長不同摻雜濃度的磷化銦鋁，可發現活化能為0.24eV的缺陷濃度隨碲摻雜濃度而改變,因此為一摻雜相關缺陷。最後，利用V/III比160下所成長的磷化銦鋁來探討少數載子缺陷，可發現僅有一個少數載子缺陷存在其中，缺陷活化能為0.25eV，經由缺陷分佈研究可判斷此應一塊材缺陷。

Deep level transient spectroscopy measurements were performed to study the defects in Te-doped AlInP, grown by MOCVD. By using pn junction structure, both minority and majority carrier traps can be observed. Here, the V/III mole ratio effect and Te-doping concentration effect are considered. First, the majority carrier traps existed in Te-doped AlInP grown by different V/III mole ratio conditions have been stuied. One majority carrier trap exists in AlInP grown by V/IIII mole ration 160 and 120.The activation energy of the majority carrier trap is 0.2 eV and this deep level has been verified as a bulk defect by defect-distribution study:Besides the deep level exists in the same type as above, another majority carrier trap, which activation energy is 0.648 eV, is found in Te-doped AlInP grown by V/III ole ration 80.The more deep level existed in AlInP should result from phosphorus vacancy. Second, the doping concentration effect has been observed. The majority carrier trap concentration in Te-doped AlInP grown by V/III mole ration 120 is related to Te-doping concentration, indicationg the deep level concentration increasing with proomoting doping concentration. Thus, the majority carrier trap which activation energy is 0.24 eV is a dopant-related defect. Finally, the minority carrier trap in AlInP grown by V/III mole ratio 160 has been studied. Only one Minority carrier trap exists in AlInP and this deep level activation energy is 0.25 eV. From defect-distribution study, the minority carrier trap has been verified as a bulk defect.