標題: A CMOS-Compatible, High RF Power, Asymmetric-LDD MOSFET with Excellent Linearity
作者: Chang, T.
Kao, H. L.
Chen, Y. J.
Liu, S. L.
McAlister, S. P.
Chin, Albert
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2008
摘要: We report the performance of 0.18 mu m RF power MOSFETs with an Asymmetric-Lightly-Doped-Drain (LDD) design. Such devices do not have an n-type drain extension and exhibited better characteristics than conventional MOSFETs at same gate length. The devices showed a DC breakdown voltage of 6.9 V, a 0.54 W/mm power density, 115 GHz f(max), and a good adjacent channel power ratio (ACPR) linearity, as well as a 52% drain efficiency at 2.4 GHz.
URI: http://hdl.handle.net/11536/719
ISBN: 978-1-4244-2377-4
期刊: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2008, TECHNICAL DIGEST
起始頁: 457
結束頁: 460
Appears in Collections:Conferences Paper