研究雙重電漿改良之高靈敏度矽鍺奈米線生物感測元件

Abstract

近幾年來，半導體奈米線（NWs）在各領域被廣泛的研究與討論，其獨特的性質，堪稱最具有潛力的研究之一。本實驗團隊亦利用矽鍺奈米線（SiGe NWs）成功的製作出具有良好感測特性的生物晶片，經由實驗證實矽鍺奈米線生物感測元件優於傳統多晶矽奈米線生物感測元件（Poly-Si NWs biosensor）。 在本論文中，我們利用積體電路製造技術，成功的打造出矽鍺奈米線生物感測元件，並引進獨特的雙重電漿（Dual plasma）處理技術修補缺陷，其對矽鍺奈米線進行電漿氟化前處理（CF4 plasma pre-treatment）及電漿氮化後處理（N2 plasma post-treatment），藉由上述雙重電漿處理技術來修補缺陷，優化矽鍺奈米線生物感測元件。透過電性分析結果顯示，經過雙重電漿處理技術的生物晶片，其靈敏度（Sensitivity）均有顯著的改善，從結果來看靈敏度至少提昇32.8 %。因此，本研究所提出的論述有助於未來應用在量產矽鍺奈米線生物感測元件產品上。

In the recent years, semiconductor nanowires (NWs) has been extensively investigated and discussed in various fields. NWs have some unique properties. It is also considered as the one of the most potential topics. Our research team made good use of silicon germanium NWs (SiGe NWs) to successfully produce the biosensor with excellent sensing characteristics. The results showed that the characteristics of SiGe NWs biosensor were superior to those of the traditional Poly-Si NWs biosensor. In the thesis, we successfully produce SiGe NWs biosensor by VLSI technology. Besides, the unique dual plasma technology that combined the CF4 plasma pre-treatment and N2 plasma post-treatment is introduced to repair defects as well as optimize SiGe NWs biosensor. Finally, we find that the sensitivity (S) of the biosensor with dual plasma technology has significantly improved at least 32.8 %. Therefore, our research could be applied in produce industrial SiGe NWs biosensor in the future.