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dc.contributor.author葉淑梅en_US
dc.contributor.authorShu-Mei, Yehen_US
dc.contributor.author李威儀en_US
dc.contributor.authorWee-Yi Leeen_US
dc.date.accessioned2014-12-12T03:01:44Z-
dc.date.available2014-12-12T03:01:44Z-
dc.date.issued2006en_US
dc.identifier.urihttp://140.113.39.130/cdrfb3/record/nctu/#GT009377502en_US
dc.identifier.urihttp://hdl.handle.net/11536/80318-
dc.description.abstract利用金屬黏合及雷射剝離系統等製程的整合,將長於藍寶石基板的雷射結構轉移至砷化鎵或矽基板,藉由其立方晶格之基板特性,便於將雷射結構劈裂,形成雷射共振腔之劈裂鏡面。由於金屬黏合的品質會影響劈裂時的結果,故利用金屬,以及實驗黏合時調變其黏合參數之設定,以得到較佳的效果。 經由掃描式電子顯微鏡及原子力顯微鏡之量測數據,證明我們藉由數站製程之整合流程所得到之劈裂面, 其粗糙程度是小到足以作為雷射之共振腔之鏡面。zh_TW
dc.description.abstractWe integrated the metal bonding and laser lift off process, then transferred the GaN LD structure to the new substrate.By the new cubic substrate, we can cleave the LD structure into a rectangle easier. It is usful to get the mirror facet of laser diode. After we measue by AFM, the data of cleaved facet roughness is qualified to be a reflectivty mirror of lase diode.en_US
dc.language.isozh_TWen_US
dc.subject氮化鎵zh_TW
dc.subject劈裂zh_TW
dc.subject金屬黏合zh_TW
dc.subjectGaNen_US
dc.subjectCleaveen_US
dc.subjectmetal bondingen_US
dc.title利用金屬黏合及劈裂技術完成氮化鎵雷射二極體共振腔zh_TW
dc.titleStudying of GaN Edge Laser Emitting Diode Cavity by Metal Bonding and Cleaving Technologyen_US
dc.typeThesisen_US
dc.contributor.department理學院應用科技學程zh_TW
Appears in Collections:Thesis


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